Situation
The functional principle of a solar cell invariably includes doping to form an n-type layer on top of a p-type wafer. This pn-junction is produced by diffusing an emitter on the front and back of the solar cell. Afterwards, the edges are isolated to prevent a short circuit in the cell. This is usually done by lasers or through etching processes. The ISO TEST Inline accurately and reliably tests edge isolation by wet chemical etching or plasma etching directly following the diffusion process.
Principle
- Inspection of the front emitter
- Tests resistivity and the diode characteristic between the front and back of the cell
Advantages
- Finds possible defects in the edge-isolation process
- System to check results of plasma etching and wet chemical etching processes
Technical Data
Topic |
Description |
Samples to be measured |
- Mono- and multi-crystalline wafers - Square or pseudo square - Textured or non-textured surface - Diffused layer (n+p or p+n) - Edge isolated (plasma or single-side wet chemical) |
Wafer size |
125 … 210 mm |
Total Cycle time |
approx. 10 sec |
Machine interface (automation) |
- Parallel I/O - Parallel I/O (combined with RS232 for WaferID info) - Profibus |
Data interface (to factory network or automation) |
- OPC (server) - XML via TCP/IP |
Note: All technical details are subject to change without prior notice. Only technical specifications contained in an offer are binding.




