Situation

The functional principle of a solar cell invariably includes doping to form an n-type layer on top of a p-type wafer. This pn-junction is produced by diffusing an emitter on the front and back of the solar cell. Afterwards, the edges are isolated to prevent a short circuit in the cell. This is usually done by lasers or through etching processes. The ISO TEST Inline accurately and reliably tests edge isolation by wet chemical etching or plasma etching directly following the diffusion process.

Principle

  • Inspection of the front emitter
  • Tests resistivity and the diode characteristic between the front and back of the cell

Advantages

  • Finds possible defects in the edge-isolation process
  • System to check results of plasma etching and wet chemical etching processes

Technical Data

Topic

Description

Samples to be measured

- Mono- and multi-crystalline wafers

- Square or pseudo square

- Textured or non-textured surface

- Diffused layer (n+p or p+n)

- Edge isolated (plasma or single-side wet chemical)

Wafer size

125 … 210 mm

Total cycle time

approx. 10 sec

System layout

Measurement stage, measurement electronics and controller PC integrated in transportable 19” rack.
Industrial keyboard with integrated trackball, 17” TFT

Note: All technical details are subject to change without prior notice. Only technical specifications contained in an offer are binding.

Download

  1. Product Data Sheet 203_GP-ISO-TEST-Inline-an… (310 KB)