Situation
Often, measuring a specific value is adequate to enable quick classification of solar cells into various output and quality classes. Detailed information concerning the behavior of a measured parameter can help to identify the cause of a concrete problem. The WAF SCAN system carefully and precisely measures excess charge carrier life, emitter layer resistance, and diffusion length of charge carriers in solar cells. This provides insights that help to monitor the whole process reliably.
- Housing with movable measurement plate and sensor head
- Base unit with system controller for making adjustments and scanning
Advantage
- Scanning system for manual loading of wafers up to 156 mm
Technical Data
Topic |
Description |
Samples to be measured |
- Mono- and multi-crystalline wafers - Up to 210 mm edge length Lifetime: any type of silicon sample – the interpretation of the result depends on the sample preparation LBIC: processed solar cells with metallisation |
Measurement range and accuracy |
|
Lateral resolution (map) |
0.5 mm, 1 mm, 2 mm, 4 mm, 8 mm, 16 mm |
Measurement time |
Single point ~ 0.3…1.0 seconds, Full map 2 minutes to 24 hours (depending on resolution, accuracy, |
Measurement mode and measurement range |
|
Lifetime measurement |
Wavelength 904 nm (Pulse width 200 ns) |
Measurement range |
0.1 µs - 30 ms |
LBIC |
Wavelengths approx. 400 nm/650 nm, 880, 950, 980 nm, parallel measurement of reflexion/wavelength Determining of diffusion length via inverser IQE |
Rspec |
Measurement via Foucault Current sensor Measurement range 0.1…25 Ωcm / 0.1 … 12 Ωcm (for thicknesses <200 µm) |
Rsheet |
Measurement via Surface Photovoltage sensor Measurement range 10…200 Ohms/sqr |
Note: All technical details are subject to change without prior notice. Only technical specifications contained in an offer are binding.