The electronic quality of the silicon wafer strongly affects the electrical performance of the subsequent solar cell. Its performance potential depends on the lifetime of the charge carriers. The carrier lifetime is influenced by the resistivity of the material and impurities, which diffuse into the material during high temperature processes. Impurities introduced into the material during processing reduce the open-circuit voltage of the solar cells produced. IN-LIFE lets you reliably determine the service life of charge carriers in silicon wafers.
Principle
- Non-contact measurement “on the fly” or stop-measurement
Advantages
- Increased energy efficiency of the production line
- 100% control rate at throughput times of 1 second or less
- More than 3600 wafers/hour
- No additional handling
- User-friendly software
Technical Data
Topic |
Description |
Samples to be measured |
- Mono- and multi-crystalline wafers - Square or pseudo square - As-cut, textured or non-textured surface - With or without diffused layer (n+p or p+n) |
Wafer size |
125 … 210 mm |
Measurement range |
0.1 … 1000 µs |
Measurement spot |
approx. 10 mm diameter |
Machine interface (automation) |
- Parallel I/O - Combined Parallel I/O and RS232 for WaferID info - Profibus |
Data interface (to factory network or automation) |
- OPC (server) - XML via TCP/IP |
Note: All technical details are subject to change without prior notice. Only technical specifications contained in an offer are binding.